首页> 外国专利> POTENTIOMETRIC IMMUNOSENSOR FOR DETECTING PHOSPHORYLATED NEURONAL NITRIC OXIDE SYNTHASE

POTENTIOMETRIC IMMUNOSENSOR FOR DETECTING PHOSPHORYLATED NEURONAL NITRIC OXIDE SYNTHASE

机译:电位测定法检测磷酸化的神经元一氧化氮合酶

摘要

PURPOSE: A potentiometric immunosensor for detecting neuronal nitric oxide synthase(nNOS) is provided to measure nNOS level with high sensitivity and selectivity.;CONSTITUTION: A potentiometric immunosensor for detecting neuronal nitric oxide synthase(nNOS) comprises anti-phospho-nNOS antibody fixed on an ion-selective electrode film. The ion-selective electrode film is coated with ionopore containing carboxy polyvinyl chloride and tridodecylamine. A method for detecting the nNOS comprises: a step of preparing the ion-selective electrode film; a step of activating a carboxylic acid group of the ion-selective electrode film; a step of binding anti-phospho-nNOS antibody to the electrode film; a step of performing antigen-antibody reactin between the nNOS antibody and Nnos; and a step of binding nNOS and anti-IgG urea conjugate.;COPYRIGHT KIPO 2011
机译:目的:提供一种电位检测免疫传感器,用于神经元一氧化氮合酶(nNOS)的检测,具有高灵敏度和选择性。离子选择电极膜。离子选择电极膜上覆盖有含有羧基聚氯乙烯和十三烷基胺的离子孔。一种检测nNOS的方法,包括:制备离子选择电极膜的步骤;活化离子选择电极膜的羧酸基的步骤;将抗磷酸-nNOS抗体与电极膜结合的步骤;在nNOS抗体和Nnos之间进行抗原-抗体反应的步骤; ;以及结合nNOS和抗IgG尿素结合物的步骤。; COPYRIGHT KIPO 2011

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