METHOD FOR MANUFACTURING A SWITCHING DEVICE AND THE SWITCHING DEVICE, CAPABLE OF OBTAINING A VARIABLE RESISTANCE MEMORY DEVICE BASED ON A TRANSITION-METAL OXIDE FILM

摘要

PURPOSE: A method for manufacturing a switching device and the switching device are provided to select and manufacture a switching device with a unipolar or bipolar characteristic by inserting metal nano-particles into the switching device.;CONSTITUTION: A polymer thin film and a titanium precursor thin film are repetitively stacked on a lower electrode in order to manufacture a multi-layered thin film. The multi-layered thin film is thermally treated. The titanium precursor thin film is converted into a titanium oxide thin film. An upper electrode is stacked on the multi-layered thin film. The multi-layered thin film includes metal nano-particles.;COPYRIGHT KIPO 2011