GAS SENSOR COMPOSITION FORMED BY DOPING A TRANSITION METAL ON AN N-TYPE SEMICONDUCTOR, A GAS SENSOR COMPRISING THE SAME AND A MANUFACTURING METHOD OF GAS SENSOR COMPOSITION

摘要

PURPOSE: Gas sensor composition, a gas sensor comprising the same and a manufacturing method of gas sensor composition are provided to obtain high reaction sensitivity to a low concentration of gas.;CONSTITUTION: Gas sensor composition comprises the material which is formed by doping the transition metal on an N-type semiconductor. The N-type semiconductor is a material selected from ZnO, Sn2O, and TiO2. The transition metal is cobalt. The generated material Zn(1-x)MxO, where M represents the transition metal, and x exceeds 0 and is 0.2 or less. The generated material forms a thin film of a thickness of 10-100nm.;COPYRIGHT KIPO 2011