METHOD FOR CHEMICALLY AND MECHANICALLY POLISHING A PHASE CHANGE MATERIAL, AND A METHOD FOR MANUFACTURING A PHASE CHANGE MEMORY DEVICE, CAPABLE OF OMITTING AN ETCH BACK ETCHING PROCESS

摘要

PURPOSE: A method for chemically and mechanically polishing a phase change material and a method for manufacturing a phase change memory device are provided to reduce the change of composition of the phase change materials.;CONSTITUTION: A phase change material(11) is formed on an active surface of a semiconductor wafer. The phase change material is chemically and mechanically polished by a slurry and a polishing pad. The change of composition of the phase change material is suppressed by controlling the temperature of a contact area between the phase change material and the polishing pad within a preset range.;COPYRIGHT KIPO 2011