SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND A METHOD FOR MANUFACTURING THE SAME, CAPABLE OF FORMING A GATE DIELECTRIC FOR A GERMANIUM TRANSISTOR

摘要

PURPOSE: A semiconductor field effect transistor and a method for manufacturing the same are provided to improve the reliability and the performance of elements by doping a stabilization metal to stabilize a semiconductor oxide.;CONSTITUTION: A semiconductor oxide layer is formed on a substrate(10). A metal oxide layer is formed on the semiconductor oxide layer. The semiconductor oxide layer and the metal oxide layer are converted into a first dielectric layer(23). A second dielectric layer(24) is formed on the first dielectric layer. A first gate electrode layer(25) is formed on the second dielectric layer. A second gate electrode layer(26) is formed on the first gate electrode layer.;COPYRIGHT KIPO 2011