PROPERTY OF BEING SIMILAR LIKE SANCTIONING THE HIGH VOLTAGE ALTHOUGH THE LOW POWER IS SANCTIONED IS HAD THE MANUFACTURING METHOD OF THE POLYCRYSTALLINE SILICON THIN FILM

摘要

PURPOSE: The manufacturing method of the polycrystalline silicon thin film the electric field is no need to be sanctioned repetitively. Therefore, the process time can be reduced.;CONSTITUTION: The manufacturing method of the polycrystalline silicon thin film the first insulation layer(20), the amorphous silicon thin film(30), and the second insulation layer(40) and conductive film(50) are formed successively on the substrate(10). The amorphous silicon thin film is crystalized with the high heater which the electric field is sanctioned in the conductive film by using electrode and is created.;COPYRIGHT KIPO 2011