Method for fabricating active region in semiconductor device using space patterning tech

摘要

to form an active region of a semiconductor device using the space pattern technique of the present invention sacrifices on a semiconductor substrate, film to form a pattern; Enclosing each side of the sacrificial layer pattern to form a spacer; Step of removing the sacrificial layer pattern to form a ring-type spacers to expose the semiconductor substrate disposed in the inner space; A ring-type spacers to separate and positioned spaced a distance from the first spacer and the first spacer to form a second spacer disposed in the first spacer and the mirror structure; And the first and second etching the exposed portions of the semiconductor substrate, a spacer as an etch mask to the first active region and the first active region and the unit cell areas arranged as a mirror structure including a second active region located apart from each other by a predetermined distance and a step of forming.