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MAGNETIC MEMORY DEVICE AND METHOD FOR READING MAGNETIC MEMORY CELL USING SPIN HALL EFFECT
MAGNETIC MEMORY DEVICE AND METHOD FOR READING MAGNETIC MEMORY CELL USING SPIN HALL EFFECT
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机译:磁性存储器和利用自旋霍尔效应读取磁性存储器的方法
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摘要
A magnetic memory device includes a substrate for reading and a magnetic memory cell. The substrate has a channel layer. The magnetic memory cell is formed on the substrate and has a magnetized magnetic material that transfers spin data to electrons passing the channel layer. Data stored in the magnetic memory cell are read by a voltage across both side ends of the channel layer that is generated when the electrons passing the channel layer deviate in the widthwise direction of the channel layer by a spin Hall effect.
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