TFT, fabricating methode of the TFT, and organic lighting emitting diode display device comprising the same

摘要

This invention is a thin film transistor, a method of manufacturing the same, and relates to an organic light emitting display device including the same a substrate; Disposed on the substrate, a channel region, source / drain regions and the semiconductor layers including a body contact region; The position on the semiconductor layer, the gate insulating film to expose the body contact region; Located on the gate insulating film, the body contact region and in contact with the silicon film is exposed by the gate insulating film; A gate electrode disposed on the silicon layer; An interlayer insulating layer disposed on the gate electrode; And disposed on the interlayer insulating film, the source / drain region and electrically comprises a source / drain electrode connected to the body contact region is a thin film transistor and a method of manufacturing the same, characterized in that formed in the edge region of the semiconductor layer, and it is related to an organic light emitting display device with him.