METHOD FOR ANALYSIS OF QUANTUM EFFICIENCY OF A SEMICONDUCTOR LIGHT-RADIATING DEVICE AND ANALYSIS SYSTEM USING ITS

摘要

1. A method for analyzing the quantum efficiency of a semiconductor light emitting device, comprising:! providing an image of a semiconductor layer of a semiconductor light emitting device; ! Convert this image to a binary image! obtaining the Renyi dimension Dq for degree q as a parameter of multifractal analysis of a binary image and! determination of the Renyi dimension Dq as a criterion for the quantum efficiency of a semiconductor light-emitting device. ! 2. The method according to claim 1, in which the Renyi dimension Dq is determined by the equation below:! ! where, in the case where the binary image is divided into the number N of square sections with sides, each of which has a length L, Pi is determined by the equation below:! ! where mi (L) is set to 1 if the i-th portion includes a pixel having a pixel value of 1, and mi (L) is set to 0 if the i-th portion does not include a pixel having a pixel value of 1.! 3. The method according to claim 1, in which the determination of the Renyi dimension Dq as a criterion for the quantum efficiency of a semiconductor light emitting device comprises:! obtaining the value Δq given by the equation; and! determining the obtained Δq value as a criterion for the quantum efficiency of a semiconductor light-emitting device. ! 4. The method according to claim 1, in which the image is an image with gray levels,! the conversion of this image to a binary image contains:! setting the pixel value to 0 when this pixel has a gray level value that is greater than or equal to a predetermined threshold value; and! setting