METHOD FOR PRODUCING HETEROGENEOUS PN junctions based on zinc oxide nanorods

摘要

1. A process for preparing a heterogeneous pn transition based on zinc oxide nanorods, comprising growing by chemical vapor deposition of oriented vertically and at the base of interlocking zinc oxide nanorods on a conductive substrate of doped silicon, followed by precipitation of nickel oxide on them to form a continuous layer on the tips of the nanorods, wherein the deposition of nickel oxide on zinc oxide nanorods carried out at an angle to the longitudinal axis of the zinc oxide nanorods, which prevents precipitation of n oxide Ikel at the base of the nanorods. ! 2. A method according to claim 1, characterized in that the precipitation of nickel oxide is carried elektoronno-beam or magnetron sputtering. ! 3. A method according to claim 1, characterized in that as take-doped silicon with a resistivity silicon 0.1- 0.001 ohm-cm. ! 4. A method according to claim 1, characterized in that the ratio of length to diameter of the zinc oxide nanorods is 10-100. ! 5. A method according to claim 1, characterized in that the precipitation of nickel oxide on zinc oxide nanorods carried out at an angle to the longitudinal axis of the nanorods constituting 10-70 °.