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SPATTERING TARGET BASED ON GALLIUM OXIDE-ZINC OXIDE, METHOD OF THIN TRANSPARENT CONDUCTIVE FILM PRODUCTION AND THIN TRANSPARENT CONDUCTIVE FILM
SPATTERING TARGET BASED ON GALLIUM OXIDE-ZINC OXIDE, METHOD OF THIN TRANSPARENT CONDUCTIVE FILM PRODUCTION AND THIN TRANSPARENT CONDUCTIVE FILM
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机译:基于氧化镓-锌氧化物的散射靶,薄透明导电膜的生产方法和薄透明导电膜
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摘要
FIELD: construction.;SUBSTANCE: spattering sintered target based on gallium oxide-zinc oxide contains 0.002-0.05 wt % of aluminium oxide. After sintering, the target's density is 5.55 g/cm3 or more. In specific cases of invention application, the spattering target includes 0.1-10 % wt of gallium oxide and has specific resistance 3.0 mΩ·cm or less. Method of thin transparent conductive film production based in gallium oxide- zinc oxide containing 0.002-0.05 wt % of aluminium oxide on substrate provides for spattering the above mentioned sintered target.;EFFECT: target provided with increased density after sintering preventing scales formation during spattered sedimentation; occurrence of abnormal electric charge and particles is diminished.;8 cl, 3 dwg, 3 tbl, 4 ex
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机译:技术领域:结构;目的:基于氧化镓-氧化锌的溅射烧结靶含有0.002-0.05重量%的氧化铝。烧结后,靶的密度为5.55g / cm 3 Sup>以上。在本发明应用的特定情况下,溅射靶包括0.1-10wt%的氧化镓并且具有3.0mΩ·cm或更小的电阻率。基于在基板上含有0.002-0.05重量%的氧化铝的氧化镓-氧化锌的薄透明导电膜的制造方法,使上述烧结靶飞散。效果:烧结后靶的密度增加,防止了在沉积沉淀时形成水垢。 ; 8 cl,3 dwg,3 tbl,4 ex
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