A high frequency electromagnetic oscillations of plasma-chemical reactors

摘要

The invention relates to sources of electromagnetic waves for plasma chemical treatment of various surfaces with large area devices, and can be used for thin film deposition, surface modification, cleaning and etching, in particular, at creation of nanostructured coatings and films. Use of a source of high-frequency electromagnetic waves in the plasma chemical reactor process allows objects with large surface areas in a single process and to increase the uniformity of the applied coating while increasing the efficiency of the plasma chemical reactor and increasing the reliability of the source and the reactor as a whole. Performing high-frequency (HF) electromagnetic oscillation generator (1) as a HF generator of electromagnetic waves with random phase and amplitude expands the volume of the working chamber, in which the condition of electron cyclotron resonance, which leads to an increase in the volume occupied by the plasma. Connecting band-pass filter (2) between the RF generator of electromagnetic waves (1) and the power amplifier of electromagnetic waves (3) provides an increase in efficiency of the plasma chemical reactor. Application HF valve (4) between the amplifier power of electromagnetic oscillations (3) and the input device of electromagnetic waves (5) to the working chamber plasma chemical reactor provides a power amplifier protection (4) from reflected from the working chamber of electromagnetic oscillations and at the same time the plasma stability and uniformity of its flow on treated object by eliminating the influence of the reflected wave on the amplitude and phase of the electromagnetic waves at the output of the RF source of electromagnetic oscillations. 1 yl.