An integrated sige - nmos - and - of pmos transistors is in a high performance - bicmos - process

摘要

A method for the production of an integrated bicmos - circuit, wherein the circuit vertical bipolar transistors and cmos - transistors on a substrate (14), comprising the steps of:– Simultaneous formation of a channel region of a mos - transistor (12) and a base layer of a bipolar transistor (10) through the growth of an epitaxial layer, wherein the growth of the epitaxial layer (28), in turn, includes the steps of:– the epitaxial growing of a first sublayer of silicon (28a);– the epitaxial growing of a first sublayer of silicon - germanium (28b) on the first layer of silicon (28a);– the epitaxial growing of a second undercoat consists of silicon (28c) on the first layer of silicon - germanium (28b);– the epitaxial growing of a second undercoat consists of silicon - germanium (28d) on the second layer of silicon (28c).