Method and system for the quantitative production lines internal material characterization in semiconductor manufacture on the basis of the structure measurements and corresponding models

摘要

A method comprising the steps of:Obtaining a first measuring data set by a non-destructive measurement technology of one or more first substrates (201), on which one or more first layers of one or more materials (210) of a semiconductor component (200) are formed, wherein the first measuring data record contains a plurality of measured parameters, the information about at least one structural property of the one or more first layers contain;Obtaining the first reference data (281b), which with the one or more first layers are linked;Determining a model (252a) on the basis of a partial quantity of the measured parameters of the first measuring data set, wherein the model (252a) a dependence of the subset of the parameters of the reference data (281b) reproduces;Acquiring a second measuring data set of one or more second substrates (201), on which one or more second layers of the one or more materials (210) are formed, wherein the second measuring data record corresponds to at least of the partial quantity;Evaluating the at least one structural property..