首页> 外国专利> Debris filter arrangement for plasma-based radiation source utilized for semiconductor lithography application, has plasma and buffer gas sections, where pressure gradient between sections is adjusted to order of magnitude

Debris filter arrangement for plasma-based radiation source utilized for semiconductor lithography application, has plasma and buffer gas sections, where pressure gradient between sections is adjusted to order of magnitude

机译:用于半导体光刻应用的基于等离子体的辐射源的碎片过滤器装置具有等离子体和缓冲气体部分,其中部分之间的压力梯度被调整到数量级

摘要

The arrangement (4) has intermediate sections (24, 25) arranged between plasma and buffer gas sections (21, 23). The plasma section, a collector section (22), the gas section and the intermediate sections are separated from one another by filter structures (41-44) e.g. flat lamella filters. The intermediate, plasma and collector sections have vacuum pumps (31-34), respectively outside of the gas section, such that pressure gradient between the gas and plasma sections is adjusted to an order of magnitude for reducing vacuum pressure at a location of plasma (1) to 1 Pascal or less than 1 Pascal.
机译:装置(4)具有布置在等离子体和缓冲气体部分(21、23)之间的中间部分(24、25)。等离子体部分,收集器部分(22),气体部分和中间部分通过例如过滤器结构(41-44)彼此分开。平板状薄层过滤器。中间部分,等离子部分和收集器部分分别在气体部分的外部具有真空泵(31-34),以便将气体部分和等离子部分之间的压力梯度调整到一个数量级,以降低等离子位置处的真空压力( 1)到1帕斯卡或小于1帕斯卡。

著录项

  • 公开/公告号DE102008031650A1

    专利类型

  • 公开/公告日2010-02-11

    原文格式PDF

  • 申请/专利权人 XTREME TECHNOLOGIES GMBH;

    申请/专利号DE20081031650

  • 发明设计人 ZIENER CHRISTIAN;HERGENHAN GUIDO;

    申请日2008-07-04

  • 分类号H05G2/00;G03F7/20;

  • 国家 DE

  • 入库时间 2022-08-21 18:28:54

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