A sense amplifier with steps for the reduction of a capacitance erroneous adaptation in a current mirror load

摘要

Sense amplifier circuit for reading a condition of a memory cell, comprising:a first stage, the one hand, from the memory cell and a cell stream branched off from a reference cell receives reference current is branched off;a second stage, which receives the cell stream and the reference current; anda comparator, which with the first stage and the second stage is coupled, said comparator makes available an output signal, the the state of the memory cell on the basis of a difference of the through the first stage, and the second stage for the available voltage, and wherein the state indicated by the comparator is essentially unaffected by capacitive current components which, by means of a transient behavior of the first and the second stage are supplied.