Method and system for material characterization in half conductor position processes on the basis of ftir with a variable angle of incidence

摘要

During the processing of complex semiconductor components, dielectric material systems with a structure in a non-destructive manner to be analyzed using an ftir - art in combination with a plurality of angles of incidence. In this way, the topography dependent information are obtained and / or the data, can be organized more efficiently due to the larger amount of information, which is obtained by means of the plurality of angle of incidence.