首页> 外国专利> Micro lithographic projection exposure method for manufacturing e.g. LCD, involves projecting mask structure on region of layer using projection exposure apparatus, where regions are arranged in parts in optical path of illumination device

Micro lithographic projection exposure method for manufacturing e.g. LCD, involves projecting mask structure on region of layer using projection exposure apparatus, where regions are arranged in parts in optical path of illumination device

机译:制造微光刻投影曝光方法,例如LCD涉及使用投影曝光设备在层的区域上投影掩模结构,其中区域被布置在照明装置的光路中的部分中

摘要

The method involves providing a substrate i.e. silicon wafer, including a layer made of light sensitive material i.e. photo-resist. A micro lithographic projection exposure apparatus including an illumination device (101) and a projection lens (102) is provided, where the illumination device has a polarization manipulator (115) with a pair of regions that influence a polarization state of splitting light in different ways. A mask structure is projected on a region of the layer using the exposure apparatus, where the regions are arranged in parts in an optical path of the illumination device. An independent claim is also included for a micro lithographic projection exposure apparatus.
机译:该方法涉及提供衬底,即硅晶片,其包括由光敏材料制成的层,即光致抗蚀剂。提供一种包括照明装置(101)和投影透镜(102)的微光刻投影曝光设备,其中该照明装置具有偏振操纵器(115),该偏振操纵器具有一对以不同方式影响分光的偏振状态的区域。 。使用曝光设备将掩模结构投影在该层的区域上,其中该区域被部分地布置在照明装置的光路中。对于微光刻投影曝光设备也包括独立权利要求。

著录项

  • 公开/公告号DE102009016063A1

    专利类型

  • 公开/公告日2009-11-26

    原文格式PDF

  • 申请/专利权人 CARL ZEISS SMT AG;

    申请/专利号DE20091016063

  • 发明设计人 DEGUENTHER MARKUS;KNUEFERMANN MARKUS;

    申请日2009-04-03

  • 分类号G03F7/20;

  • 国家 DE

  • 入库时间 2022-08-21 18:28:22

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