manufacturing method for acoustic volumenwellen resonator using the internal mechanical tension of a layer of metal, and thus manufactured resonator

摘要

PURPOSE: A method for fabricating FBAR by using internal stress of a metal layer without using an additional holder and a resonator fabricated thereby are provided to separate a piezoelectric resonance structure as much as a predetermined height from a substrate by generating the stress to the top direction in a process for depositing a lower electrode layer. CONSTITUTION: A sacrificial layer is stacked on a semiconductor substrate(100). A predetermined region is removed from the semiconductor substrate in order to form an electrical contact between a signal line of the semiconductor substrate and a lower electrode layer(120). A metal layer is deposited on the sacrificial layer. The lower electrode layer is formed by patterning the metal layer. A piezoelectric material is deposited on the lower electrode layer. A piezoelectric layer(130) is formed by patterning the piezoelectric material. A metal layer is deposited on the piezoelectric layer. An upper electrode layer(140) is formed by patterning the metal layer.