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process for the production of detectors on siliziumbasis with lasermikrostrukturierten surface layers with elektronendonatoren
process for the production of detectors on siliziumbasis with lasermikrostrukturierten surface layers with elektronendonatoren
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机译:硅基衬底上带有激光微镜表面层和电子前驱体的探测器生产探测器的方法
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摘要
The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF 6 , having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructure layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.
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