IMAGER PIXEL IN REAR-BACK TECHNOLOGY AND IMAGE SENSOR

摘要

The invention relates to a rear-facing type of imaging pixel which comprises a crystalline silicon absorption layer (4) in which at least one carrier-collecting electrode (7) is formed on which a first potential is applied ( V1), characterized in that it further comprises: - an amorphous silicon absorption layer (5) fixed on one side of the crystalline silicon layer (4) and in which a diode (5a, 5b) is formed ), and - a transparent electrode (6) fixed on the amorphous silicon absorption layer (5) and on which a second potential (V2) is applied, the potential difference between the second potential and the first potential leading to a reverse bias of the diode. Application to imaging.