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METHOD FOR MANUFACTURING EXTRA-THIN WIRE OF COMPOUND SEMICONDUCTOR, AND ASSEMBLY OF EXTRA-THIN WIRE OF COMPOUND SEMICONDUCTOR

机译:复合半导体超薄线的制造方法以及复合半导体超薄线的组装

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an extra-thin wire of a compound semiconductor with high precision, which is suitable for mass production, and to provide an assembly of the extra-thin wire of the compound semiconductor.;SOLUTION: The manufacturing method includes: filling a fine through-hole of a template having a plurality of fine through-holes with a nanosize with the compound semiconductor by using an electrodeposition method; or filling the fine through-hole alternately with a first element and a second element which are constituent elements of the compound semiconductor into a layer state, and then diffusion-heat-treating the first element and the second element.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种适于大规模生产的高精度制造化合物半导体的细线的方法,并提供化合物半导体的细线的组装。该制造方法包括:通过电沉积方法用化合物半导体填充具有纳米尺寸的具有多个纳米尺寸的模板的模板的微细通孔;或者,将构成化合物半导体的构成元素的第一元素和第二元素交替地填充到层状的细通孔中,然后对该第一元素和第二元素进行扩散热处理。 2011,日本特许厅

著录项

  • 公开/公告号JP2011162844A

    专利类型

  • 公开/公告日2011-08-25

    原文格式PDF

  • 申请/专利权人 NAGASAKI UNIV;

    申请/专利号JP20100026986

  • 发明设计人 TAKAO KEIZO;OKAI TAKESHI;KAGAWA AKIO;

    申请日2010-02-09

  • 分类号C25D7/00;B82B3/00;B82B1/00;C25D5/50;C25D1/00;C25D5/10;C01B19/04;

  • 国家 JP

  • 入库时间 2022-08-21 18:24:59

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