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THERMOLUMINESCENCE DOSE MEASURING ELEMENT AND RADIATION DETECTOR

机译:热发光剂量测量元件和辐射探测器

摘要

PROBLEM TO BE SOLVED: To shift a thermoluminescence glow peak temperature to a higher temperature region and in addition inhibit transition of excited electrons to a ground state due to crystal defects thereby keeping an excited state immediately after radiation exposure for a long time.;SOLUTION: Into CaF2 as a base material, 0.1 mol% of TbF3, 0.5 mol% of GdF3 and 0.1 mol% of SmF3 are mixed and melted to grow a single crystal of CaF2. By irradiating the single crystal with X rays and evaluating glow peak intensity, a small peak can be confirmed around 80°C (low temperature region), and a large peak can be confirmed around 400°C (high temperature region). By thus making the peak in the low temperature region relatively smaller than the peak in the high temperature region, an F center of added Tb electrons becomes stable, and energy transition is hard to occur from the F center to the ground state with the passage of time. Therefore, the excited state immediately after exposure of radiation such as X rays can be kept for a long time.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:将热致发光辉光峰温度移至更高的温度区域,并抑制由于晶体缺陷而引起的激发电子跃迁至基态,从而在长时间暴露于辐射后立即保持激发态。以0.1mol%的TbF 3 ,0.5 mol%的GdF 3 和0.1mol%的SmF 2 将> 3 混合并熔化以生成单晶CaF 2 。通过用X射线照射单晶并评估辉光峰强度,可以在80℃(低温区域)附近确认小的峰,并且可以在400℃(高温区域)附近确认大的峰。通过这样使低温区域中的峰相对于高温区域中的峰较小,所添加的Tb电子的F中心变得稳定,并且随着F的通过,难以发生从F中心向基态的能量跃迁。时间。因此,可以长时间保持X射线等放射线照射后的激发态。版权所有:(C)2011,JPO&INPIT

著录项

  • 公开/公告号JP2011145246A

    专利类型

  • 公开/公告日2011-07-28

    原文格式PDF

  • 申请/专利权人 OSAKA SANGYO UNIV;

    申请/专利号JP20100007905

  • 发明设计人 FUKUDA KAZUSATO;

    申请日2010-01-18

  • 分类号G01T1/11;C09K11/61;C09K11/00;

  • 国家 JP

  • 入库时间 2022-08-21 18:24:46

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