首页> 外国专利> METHOD OF DETERMINING EXPOSURE AMOUNT, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM FOR DETERMINING EXPOSURE AMOUNT AND EXPOSURE AMOUNT DETERMINATION DEVICE

METHOD OF DETERMINING EXPOSURE AMOUNT, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM FOR DETERMINING EXPOSURE AMOUNT AND EXPOSURE AMOUNT DETERMINATION DEVICE

机译:确定暴露量的方法,制造半导体装置的方法,确定暴露量的程序和暴露量确定装置

摘要

PROBLEM TO BE SOLVED: To provide a method of determining exposure amount that precisely determines the exposure amount for forming a pattern having desired two-dimensional form parameter on a substrate.;SOLUTION: The method of determining exposure amount includes the steps of: acquiring a mask pattern map where the displacement distribution of the two-dimensional form parameter between the mask pattern formed on a mask and the desired mask pattern is acquired as a mask pattern map (m1); and determining the exposure amount for each position in an exposure shot based on the mask pattern map (m1) so that the displacement of the two-dimensional form parameter between the pattern on a wafer formed when the mask is shot-exposed so as to form the pattern thereon and the same formed on the desired wafer pattern falls within the predetermined range.;COPYRIGHT: (C)2011,JPO&INPIT
机译:解决的问题:提供一种确定曝光量的方法,该方法精确地确定用于在基板上形成具有期望的二维形状参数的图案的曝光量。解决方案:确定曝光量的方法包括以下步骤:获取曝光量。获取掩模图案图(m1),其中,在掩模上形成的掩模图案与期望的掩模图案之间的二维形状参数的位移分布被获取。根据掩模图案图(m1),确定曝光镜头中每个位置的曝光量,以使在掩模曝光时形成的晶片上的图案之间的二维形状参数的位移形成。其上的图案和在所需晶片图案上形成的图案落入预定范围内。;版权所有:(C)2011,JPO&INPIT

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