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SEMICONDUCTOR CIRCUIT FOR LEAKAGE CURRENT MITIGATION AND METHOD OF DETECTING AND MITIGATING LEAKAGE CURRENT RUNAWAY

机译:减轻漏电流的半导体电路及检测和消除漏电流的方法

摘要

PROBLEM TO BE SOLVED: To provide an apparatus and method for mitigating a leakage current of a semiconductor device before catastrophic leakage current runaway occurs.SOLUTION: A leakage current shift monitor unit 20 is electrically connected to an output node of a leakage current target unit 10 and collects leakage currents from a selected target semiconductor device for two consecutive predefined temporal periods and measures the difference between the collected leakage currents. A comparator 40 receives and compares the outputs of the current shift monitor unit 20 and a reference voltage generator 30. The comparator 40 propagates an alert signal to the leakage current target unit 10 when the leakage voltage output from the leakage current shift monitor unit 20 exceeds the reference voltage, that is, a condition that indicates that the leakage current is about to approach catastrophic runaway levels. This alert signal attains leak mitigation also including a repair voltage to be applied to a gate of the target semiconductor device.
机译:解决的问题:提供一种用于在灾难性泄漏电流失控发生之前减轻半导体器件的泄漏电流的装置和方法。解决方案:泄漏电流偏移监视单元20电连接到泄漏电流目标单元10的输出节点。在两个连续的预定时间周期内,从选定的目标半导体器件收集泄漏电流,并测量所收集的泄漏电流之间的差。比较器40接收并比较电流移位监视单元20和参考电压产生器30的输出。当从泄漏电流移位监视单元20输​​出的泄漏电压超过10μm时,比较器40将警报信号传播到泄漏电流目标单元10。参考电压,即表明泄漏电流即将达到灾难性失控水平的条件。该警报信号实现了泄漏缓解,该泄漏缓解还包括要施加到目标半导体器件的栅极的修复​​电压。

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