PHOTOELECTRIC CONVERSION FILM-STACKED SOLID-STATE IMAGING DEVICE WITHOUT MICROLENS, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a small and thin solid-state imaging device which does not require a gap beneath a transparent substrate bonded to a front surface of the imaging device, and selects transparent resin which does not depend on refractive index as adhesive.;SOLUTION: The photoelectric conversion film-stacked solid-state imaging device is equipped with: a semiconductor substrate 121; a photoelectric conversion film 130 stacked on a light incidence side upper layer of the semiconductor substrate 121; a signal reading means (not shown in the figure) formed in a surface portion of the semiconductor substrate 121, for reading out to an external, as shot image signals, signals corresponding to signal charge amounts detected by the photoelectric conversion film 130 according to incident light quantities; the transparent substrate (not shown in the figure) bonded to a light incidence side upper layer of the photoelectric conversion film 130 with the transparent resin as the adhesive; and electric connection terminals 113 which are interconnected to the signal reading means and which penetrate through the semiconductor substrate 121 and are exposed from the opposite surface of the surface where the photoelectric conversion film 130 of the semiconductor substrate 121 is formed.;COPYRIGHT: (C)2012,JPO&INPIT