SEMICONDUCTOR LASER AND ELECTROABSORPTION MODULATOR INTEGRATED DISTRIBUTED FEEDBACK LASER

摘要

PROBLEM TO BE SOLVED: To provide an element achieving high output even at high temperatures, in regard to a distributed feedback semiconductor laser or Fabry-Perot laser with an oscillation wavelength of 1.290-1.350 μm.;SOLUTION: The semiconductor laser includes an active layer 2 having a multi quantum well structure of an InGaAlAs material excellent in high output power at high temperatures on an InP substrate, with its barrier layer optimal values (x value and y value of In_(1-x-y)Ga_(x)Al_(y)As) being in the range of 0.19x0.27 and 0.31y0.39 simultaneously.;COPYRIGHT: (C)2011,JPO&INPIT