Surface reforming manner and the surface of silicon dioxide quality materials silicon dioxide quality materials and that composite material null

摘要

PROBLEM TO BE SOLVED: To form a silicon nitride layer discontinuous in the depth direction on the surface of a silicon dioxide base material.;SOLUTION: The inside of a reaction furnace 2 is made an atmosphere having an ultra-low oxygen partial pressure by filling the inside with nitrogen gas in which the oxygen partial pressure is made to be 1×10^-26 atm by a solid electrolyte-type oxygen pump. Thereafter, a high purity silicon dioxide-based material is placed in the reaction furnace 2, and a silicon nitride layer discontinuous in the depth direction is formed in the surface of the silicon dioxide-based material by heating the silicon dioxide-based material to 1,000°C in order to dissociate oxygen from the surface of the silicon dioxide-based material and at the same time, to bond nitrogen to the surface. The analysis of the surface and in the depth direction is carried out while focusing attention to Si-N bond by using an XPS (X-ray photoelectron spectrometer). Consequently, nitrogen detected in the surface disappears at the depth of 10 nm and is detected in a layer from a depth of 470 nm to a depth of 540 nm, having a thickness of 70 nm.;COPYRIGHT: (C)2008,JPO&INPIT