The SiC material and production method and use the said material two somatotype plasma chamber cathodes which compound SiC and SiC

摘要

According to this invention, by the normal pressure and pressurization sinterring, are produced, mixing the SiC powder and the carbon powder which becomes the carbon/ SiC blend which after temporarily forming, in the hot environment of the vacuum, reacting with the melted silicon of the resistance adjustment being completed, it corresponds to electric quality possesses the resistance which producing the SiC material which by, is required for the part of semiconductor manufacturing process the electric quality which is superior it possesses the mechanization study quality which, production of the SiC material is high speed, furthermore it is cheap possess the feature that of compounding for semiconductor process part SiC and SiC which the reaction sinterring SiC material and its production methodIt is offered.In addition, forming the cathode in two somatotypes of silicon SiC structure according to the other side of this invention, making use of the aforementioned reaction sinterring SiC material, two somatotype plasma chamber cathodes of the silicon SiC structure where mechanical characteristics such as electric quality and durability and resistance abrasiveness improve high heat conductivity with resistance low are offered. Selective figure Figure 1