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Arrangement structure and curvature measuring method of wafer curvature measurement

机译:晶片曲率测量的布置结构和曲率测量方法

摘要

Various embodiments describe a method of quantifying bow in a wafer. In one embodiment, the method includes measuring a first plurality of distances from a first sensor to a first surface of the wafer to calculate the bow in the wafer. The first sensor is positioned outside of a set of process modules of the plasma processing system. A determination is made whether the calculated bow of the wafer is within a pre-determined range. If the calculated bow of the wafer is within the pre-determined range, the wafer is moved into a process module of the set of process modules for processing and a recipe for processing the wafer is adjusted based on the calculated bow of the wafer. If the calculated bow of the wafer is outside the pre-determined range, the wafer is removed from the plasma processing system. Other methods are described as well.
机译:各种实施例描述了一种量化晶片中弓度的方法。在一个实施例中,该方法包括测量从第一传感器到晶片的第一表面的第一多个距离,以计算晶片中的弓度。第一传感器位于等离子体处理系统的一组处理模块的外部。确定所计算的晶片的弯曲度是否在预定范围内。如果所计算的晶片的弓度在预定范围内,则将晶片移入一组用于处理的处理模块中的处理模块,并且基于所计算的晶片的弓度来调整用于处理晶片的配方。如果计算出的晶片的弯曲度在预定范围之外,则将晶片从等离子体处理系统中移出。还描述了其他方法。

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