High propagation, low energy beamline architecture for ion implantation

摘要

(57) [summary] [MEANS FOR SOLVING PROBLEMS] ion beam devices, including the magnet assembly and a second structure defining magnet assembly, the resolving aperture ion source, of the first. Ion sources include for generating an ion beam of ribbon, the extraction openings extended. In the direction vertical to the applied magnetic field first for deflecting the ion beam of the ribbon with respect to the longitudinal direction of the cross section of the ion beam of the ribbon, magnet assembly of the first ion beam ribbon here different ion species are separated. Resolving aperture selects an ion species from the ion beam are separated. In order to draw the ions desired trajectory, in a direction parallel to the magnet assembly of the second ions of the ionic species is selected in the ion beam of the ribbon with respect to the longitudinal direction of the cross section of the ion beam ribbon give the magnetic field of the second to deflect. Width of the ion beam ribbon increases along the majority of the beam line. Performance of low energy is enhanced as a result.