Of specification of the silicon substrate crystallography equivalence {100} the surface and

摘要

PROBLEM TO BE SOLVED: To provide a method to form a 45-degree surface of a semiconductor substrate having excellent surface smoothness to be used as a reflecting surface for optical source.;SOLUTION: The method to form a crystallographically equivalent surface to the {110} surface or {100} surface of a semiconductor substrate include the following steps. First, a semiconductor substrate having a top surface crystallographically equivalent to the {110} surface or {100} surface is prepared. Then, an etching mask with an etching window is formed on the surface crystallographically equivalent to the {110} surface or {100} surface. The etching window has a sidewall having a certain degree of a tilt angle with a direction crystallographically equivalent to the 100 direction or 110 direction of the semiconductor substrate. The tilt angle is greater than 0 degree and smaller than 90 degrees, and not equal to 45 degrees. After that, selective anisotropic etching treatment is performed using the etching window, thereby forming the equivalent surface to the {110} surface or {100} surface on the semiconductor substrate.;COPYRIGHT: (C)2006,JPO&NCIPI