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Ferroelectric memory, multilevel data recording method, and multilevel data reading method
Ferroelectric memory, multilevel data recording method, and multilevel data reading method
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机译:铁电存储器,多层数据记录方法和多层数据读取方法
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摘要
A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.
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