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Positive resist composition, the positive resist composition of the compound used in the pattern forming method and the positive resist composition was used

机译:使用正型抗蚀剂组合物,用于图案形成方法的化合物的正型抗蚀剂组合物和正型抗蚀剂组合物

摘要

PPROBLEM TO BE SOLVED: To provide a positive resist composition capable of satisfying no pattern collapse, less scum, larger EL and better profile which enabled coexistence in high order dimension, a pattern forming method using the positive resist composition and a compound for use in the positive resist composition, with respect to a positive resist composition for use in a process of producing a semiconductor such as IC, in production of a circuit board of a liquid crystal, a thermal head or the like, and in another photofabrication process, a pattern forming method using the positive resist composition and a compound for use in the positive resist composition. PSOLUTION: The positive resist composition comprises (A) a resin having a specific repeating unit and having solubility in an alkali developer increased by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a solvent. The pattern forming method using the positive resist composition and the compound for use in the positive resist composition are also provided. PCOPYRIGHT: (C)2007,JPO&INPIT
机译:

要解决的问题:为了提供一种正光刻胶组合物,其能够满足图案崩塌,浮渣少,EL大且轮廓更好,从而能够在高阶尺寸上​​共存,使用该正光刻胶组合物的图案形成方法和关于在用于诸如IC之类的半导体的制造过程中,在制造液晶,热敏头等的电路板中以及在另一光加工过程中使用的正性抗蚀剂组合物,在正性抗蚀剂组合物中的用途,使用正型抗蚀剂组合物和用于正型抗蚀剂组合物中的化合物的图案形成方法。

解决方案:所述正型抗蚀剂组合物包含(A)具有特定重复单元并且通过酸的作用在碱显影剂中具有增加的溶解度的树脂,(B)在光化剂照射下能够产生酸的化合物射线或辐射和(C)溶剂。还提供了使用正性抗蚀剂组合物的图案形成方法和用于正性抗蚀剂组合物的化合物。

版权:(C)2007,日本特许厅&INPIT

著录项

  • 公开/公告号JP4597009B2

    专利类型

  • 公开/公告日2010-12-15

    原文格式PDF

  • 申请/专利权人 富士フイルム株式会社;

    申请/专利号JP20050250049

  • 发明设计人 岩戸 薫;

    申请日2005-08-30

  • 分类号G03F7/039;C08F20/10;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 18:18:07

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