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Jointing with the production mannered null

机译:与生产部门联合在一起null

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor sensor capable of suitably securing its sensing accuracy in sensing a predetermined physical quantity by using a resistor; and its manufacturing method.;SOLUTION: On a semiconductor substrate 10, a silicon oxide film 20 is formed. On the silicon oxide film 20, an upstream-side heater Rha, a downstream-side heater Rhb, lead parts L2 and L5 and an upstream-side thermometer Rka are respectively formed. The upstream-side heater Rha, the downstream-side heater Rhb, the lead parts L2 and L5 and the upstream-side thermometer Rka are covered with a silicon nitride film 40. In this case, all of the upstream-side heater Rha, the downstream-side heater Rhb, the upstream-side thermometer Rka and the lead parts L2 and L5 are each formed with a semiconductor film. Regions within the semiconductor films constituting the upstream-side heater Rha, the downstream-side heater Rhb, and the upstream-side thermometer Rka are locally formed into thin films.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供一种半导体传感器,该半导体传感器在使用电阻器感测预定物理量时能够适当地确保其感测精度;解决方案:在半导体衬底10上,形成氧化硅膜20。在氧化硅膜20上,分别形成上游侧加热器Rha,下游侧加热器Rb,引线部分L2和L5以及上游侧温度计Rka。上游侧加热器Rha,下游侧加热器Rb,引线部分L2和L5以及上游侧温度计Rka被氮化硅膜40覆盖。在这种情况下,所有上游侧加热器Rha,下游侧加热器Rbb,上游侧温度计Rka以及引出部L2,L5分别形成有半导体膜。构成上游侧加热器Rha,下游侧加热器Rhb和上游侧温度计Rka的半导体膜中的区域局部形成为薄膜。版权所有:(C)2009,JPO&INPIT

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