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Being even process manner

机译:处事方式

摘要

PROBLEM TO BE SOLVED: To solve a problem wherein warpage or waviness parts remain in a conventional method of applying flat processing to a silicon wafer by means of grinding.;SOLUTION: A liquidity adhesive 26 is applied to a substrate 18 and a raw material wafer 19 in a warpage sliced from an ingot is placed on the coated adhesive to obtain a composite wafer 27. In the case of curing the liquidity adhesive 26, an external stimulus (e.g. ultrasonic vibration) is given to the liquidity adhesive 26. After the liquidity adhesive 26 is cured, the exposed face of the raw material wafer 19 is ground to be made flat. Further, the rear side is also ground to obtain the wafer 19b whose both sides are made flat. Through the provision of the external stimulus, the liquidity adhesive 26 is cured in a state of adapting itself to a deformed state of the raw material wafer 19 so that a force is not activated to correct the deformed state of the raw material wafer 19. Then, when the wafer 19a is separated from the substrate 18, the new occurrence of a warpage to the wafer 19a is suppressed.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:解决在通过研磨对硅晶片进行平面加工的常规方法中残留翘曲或波纹的问题。解决方案:将流动性粘合剂26施加到基板18和原料晶片上将由锭切成的翘曲的图19中的部分放置在涂覆的粘合剂上以获得复合晶片27。在固化流动性粘合剂26的情况下,对流动性粘合剂26施加外部刺激(例如,超声振动)。粘接剂26固化后,将原料晶片19的露出面磨平。此外,背面也被研磨以获得其两侧均平坦的晶片19b。通过提供外部刺激,流动性粘合剂26以使其自身适应原料晶片19的变形状态的状态被固化,从而不激活力来校正原料晶片19的变形状态。 ;当晶片19a与基板18分离时,新出现的对晶片19a的翘曲被抑制。;版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP4663362B2

    专利类型

  • 公开/公告日2011-04-06

    原文格式PDF

  • 申请/专利权人 株式会社ディスコ;

    申请/专利号JP20050079265

  • 发明设计人 関家 一馬;

    申请日2005-03-18

  • 分类号H01L21/304;B24B1/00;

  • 国家 JP

  • 入库时间 2022-08-21 18:17:27

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