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Thin-film magnetic head dimensions and array measurement method and thin-film magnetic head dimensions and array measuring device

机译:薄膜磁头尺寸和阵列测量方法以及薄膜磁头尺寸和阵列测量装置

摘要

PROBLEM TO BE SOLVED: To measure dimensional dispersion and positional deviation of a resistance detection element for polishing and a magnetic resistance effect (MR) element by illuminating the MR element and the resistance detection element formed on a substrate by light with a specific wavelength.;SOLUTION: A dimension and arrangement measuring device for an MR element and a resistance detection element is constructed of a measurement optical system 101, an automatic focus system 201, an image processing and controlling system 301, and a stage system 401. In the measurement optical system 101, an MR element and the resistance detection element for polishing formed on a substrate 1 by light with a wavelength on the order of 300 nm or less, desirably with a wavelength on the order of 200 nm, emitted from a light source 21 are illuminated. The reflection light from the elements is focussed on an image, which is converted into an image signal by photoelectric conversion. From the image signal, geometric information of the MR element and the resistance element for polishing is found. In this way, high precision measurement of various dimensions and an arrangement error of the minute MR element or the resistance detection element can be carried out while an end face protection film is applied.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:通过用特定波长的光照射形成在基板上的MR元件和电阻检测元件,来测量用于抛光的电阻检测元件和MR效应元件的尺寸分散和位置偏差。解决方案:MR元件和电阻检测元件的尺寸和布置测量装置由测量光学系统101,自动聚焦系统201,图像处理和控制系统301和镜台系统401构成。系统101,由光源21发出的,波长为300nm以下的光,期望为波长200nm以下的光在基板1上形成的MR元件和研磨用电阻检测元件被形成。照明。来自元件的反射光聚焦在图像上,通过光电转换将其转换为图像信号。从图像信号中找到用于抛光的MR元件和电阻元件的几何信息。以此方式,可以在应用端面保护膜的同时进行各种尺寸的高精度测量和微小的MR元件或电阻检测元件的布置误差。;版权所有:(C)2000,JPO

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