The phase which prepares the thin film transistor null substrate which includes the ZnO semiconductor film which is produced with production manner and its production manner of the p die ZnO semiconductor film which utilizes

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of an inexpensive p-type ZnO semiconductor film that is manufactured at low temperature by a simple process and has excellent characteristics.;SOLUTION: The method of manufacturing a p-type ZnO semiconductor film includes: a step for preparing a substrate for arranging in a chamber; a step for injecting zinc and oxygen precursors into the chamber to form a ZnO thin film on the substrate through the surface chemical reaction between the zinc and oxygen precursors utilizing the atom layer deposition method; and a step for injecting the zinc precursor and a nitrogen one into the chamber and forming a doping layer on the ZnO thin film by using the surface chemical reaction between the zinc and nitrogen precursors. The semiconductor film, which is formed through the manufacturing method of the semiconductor film, is utilized, thus forming the p-type thin-film transistor having excellent characteristics on metal foil, such as glass, Si, and SUS, and a plastic substrate, and embodying a photoelectric element, such as an LED utilizing a pn junction.;COPYRIGHT: (C)2008,JPO&INPIT