Silicon carbide and radiation method of detection for radiation detection element

摘要

The element for radiation detection is offered. It is high purity and it uses SiC which possesses semi-insulating as the element for radiation detection. Radius electrode as a detection aspect of the x-ray of the circular condition of 1.25mm 2 is formed on the surface of one side of SiC1. Electrode 3 is formed in the central part of the other aspect of SiC1, electrode specified direct current voltage is impressed between 2 and 3. You can gather the electron which is formed inside SiC1 by the x-ray which incidence is done in electrode 2 in electrode 3, the electric information is output from electrode 3 to amplifier 20. Amplifier 20 expanding the electric information which is input, the voltage which responds to the number of electrons which are formed to the multiplex peak analyzer outputs.