首页> 外国专利> PHASE LOCKED SIDEBAND BEAMS BY BIAS MODULATION OF AN EXTERNAL CAVITY LASER DIODE HAVING A GRATING

PHASE LOCKED SIDEBAND BEAMS BY BIAS MODULATION OF AN EXTERNAL CAVITY LASER DIODE HAVING A GRATING

机译:带有光栅的外腔激光二极管的偏光调制对锁相的边带光束

摘要

A device and a method enabling the enhancing of the modulation efficiency of lasers by matching the modulation frequency and the FSR of the laser. This is optionally achieved by eliminating the internal cavity of a laser diode (103) placed in an external cavity and matching the FSR of the external cavity to the modulation frequency. The modulation index is enhanced to and beyond the point of complete carrier suppression even at high modulation frequency and high beam intensities. The external cavity comprises a grating (107), the cavity length being adjusted with a PZT (108) and a translation stage (109). The laser diode (103) is driven by a bias current (110) from a driver (115) and a modulation current (111) from a modulation driver (116).
机译:通过使激光器的调制频率和FSR匹配而能够提高激光器的调制效率的装置和方法。这可以通过消除放置在外腔中的激光二极管( 103 )的内腔并使外腔的FSR与调制频率匹配来实现。即使在高调制频率和高光束强度下,调制指数也可以提高到甚至超过完全抑制载波的程度。外腔包括一个光栅( 107 ),该腔的长度通过PZT( 108 )和一个平移台( 109 )进行调整。激光二极管( 103 )由来自驱动器( 115 )的偏置电流( 110 )和调制电流( 111 )来自调制驱动器( 116 )。

著录项

  • 公开/公告号US2011168913A1

    专利类型

  • 公开/公告日2011-07-14

    原文格式PDF

  • 申请/专利权人 MENACHEM GIVON;AMIR WAXMAN;

    申请/专利号US200913120656

  • 发明设计人 AMIR WAXMAN;MENACHEM GIVON;

    申请日2009-09-24

  • 分类号G01N21/64;H01S5/062;

  • 国家 US

  • 入库时间 2022-08-21 18:16:07

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