METHODS FOR FORMING BARRIER REGIONS WITHIN REGIONS OF INSULATING MATERIAL RESULTING IN OUTGASSING PATHS FROM THE INSULATING MATERIAL AND RELATED DEVICES

摘要

Methods and devices are provided for fabricating a semiconductor device having barrier regions within regions of insulating material resulting in outgassing paths from the regions of insulating material. A method comprises forming a barrier region within an insulating material proximate the isolated region of semiconductor material and forming a gate structure overlying the isolated region of semiconductor material. The barrier region is adjacent to the isolated region of semiconductor material, resulting in an outgassing path within the insulating material.