Multilevel Nonvolatile Memory via Dual Polarity Programming

摘要

A programming scheme and method of programming a non-volatile memory device for multilevel operation. The scheme includes defining two or more memory states, where at least one of the memory states is programmed with a positive polarity electrical pulse and at least one of the memory states is programmed with a negative polarity electrical pulse. The method includes programming with two or more pulses, where at least one pulse has positive polarity and one pulse has negative polarity. The non-volatile memory material may be a phase-change material and the two or more memory states may be distinguishable on the basis of electrical resistance.