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TEST STRUCTURE FOR HIGHLY ACCELERATED ELECTROMIGRATION TESTS FOR THICK METALLIZATION SYSTEMS OF SOLID INTEGRATED CIRCUITS
TEST STRUCTURE FOR HIGHLY ACCELERATED ELECTROMIGRATION TESTS FOR THICK METALLIZATION SYSTEMS OF SOLID INTEGRATED CIRCUITS
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机译:固态集成电路厚金属化系统的高速电沉积测试的测试结构
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摘要
A test structure and a process for the electromigration test of integrated circuits is suggested, in which metallization planes consisting of strip conductors of a usual thickness (11) are connected with metallization planes consisting of substantially thicker strip conductors (12) as they are required for the connection of components of higher performance.
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