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Methods of forming plasma-generating structures; methods of plasma-assisted etching, and methods of plasma-assisted deposition

机译:形成等离子体产生结构的方法;等离子体辅助刻蚀的方法以及等离子体辅助沉积的方法

摘要

Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.
机译:一些实施例包括形成等离子体产生的微结构的方法。可以对铝进行阳极氧化以形成具有多个贯穿其延伸的开口的氧化铝体。可以在开口内形成导电衬里,并且可以形成电路以控制流过导电衬里的电流。导电衬里形成多个空心阴极,并且电流被配置为在空心阴极内产生并维持等离子体。各种空心阴极或空心阴极组中的等离子体可以独立地控制。这样的独立控制的等离子体可用于在显示器或基板上产生图案。在一些实施例中,等离子体可用于等离子体辅助的蚀刻和/或等离子体辅助的沉积。一些实施例包括包含多个产生等离子体的结构的构造和组件。

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