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Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates
Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates
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机译:在单晶氧化物衬底上生长纤锌矿半导体的非极性m面外延层的方法
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摘要
The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method.
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