首页> 外国专利> ULTRA THIN NEUTRON DETECTOR, METHOD FOR MANUFACTURING THE NEUTRON DETECTOR AND NEUTRON IMAGING APPARATUS

ULTRA THIN NEUTRON DETECTOR, METHOD FOR MANUFACTURING THE NEUTRON DETECTOR AND NEUTRON IMAGING APPARATUS

机译:超薄中子探测器,中子探测器的制造方法和中子成像装置

摘要

A detector (100) for detecting neutrons includes a neutron reactive material (102) adapted to interact with neutrons to be detected and release ionizing radiation reaction products in relation to the interactions with neutrons. The detector also includes a first semiconductor element (101) being coupled with the neutron reactive material (102) and adapted to interact with the ionizing radiation reaction products and provide electrical charges proportional to the energy of the ionizing radiation reaction products. In addition electrodes are arranged in connection with the first semiconductor element (101) for providing charge collecting areas (106) for collecting the electrical charges and to provide electrically readable signal proportional to the collected electrical charges. The thickness of the first semiconductor element (101) is adapted to be electrically and/or physically so thin that it is essentially/practically transparent for incident photons, such as background gamma photons.
机译:用于检测中子的检测器( 100 )包括中子反应性材料( 102 ),该材料适于与要检测的中子相互作用并释放与电子相互作用的电离辐射反应产物中子。该探测器还包括与中子反应性材料( 102 )耦合并适于与电离辐射反应产物相互作用并提供成比例的电荷的第一半导体元件( 101 )电离辐射反应产物的能量。另外,与第一半导体元件( 101 )连接布置电极,以提供用于收集电荷的电荷收集区域( 106 ),并提供与收集的电荷。第一半导体元件( 101 )的厚度适于在电和/或物理上如此薄,以使得其对于入射光子(例如背景伽马光子)基本上/实际上是透明的。

著录项

  • 公开/公告号US2011095193A1

    专利类型

  • 公开/公告日2011-04-28

    原文格式PDF

  • 申请/专利权人 RISTO ORAVA;TOM SCHULMAN;

    申请/专利号US20100719284

  • 发明设计人 RISTO ORAVA;TOM SCHULMAN;

    申请日2010-03-08

  • 分类号G01T3/08;H01L31/18;

  • 国家 US

  • 入库时间 2022-08-21 18:13:56

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