首页> 外国专利> FET-BASED SENSOR FOR DETECTING IONIC MATERIAL, IONIC MATERIAL DETECTING DEVICE USING THE FET-BASED SENSOR, AND METHOD OF DETECTING IONIC MATERIAL USING THE FET-BASED SENSOR

FET-BASED SENSOR FOR DETECTING IONIC MATERIAL, IONIC MATERIAL DETECTING DEVICE USING THE FET-BASED SENSOR, AND METHOD OF DETECTING IONIC MATERIAL USING THE FET-BASED SENSOR

机译:用于检测离子材料的基于FET的传感器,使用基于FET的传感器检测离子材料的装置以及使用基于FET的传感器检测离子材料的方法

摘要

Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.
机译:提供用于检测离子材料的基于FET的传感器,包括该基于FET的传感器的离子材料检测装置以及使用该基于FET的传感器检测离子材料的方法。基于FET的传感器包括:感测室,包括参考电极和多个感测FET;参考室包括参考电极和多个参考FET。该方法包括:使第一溶液流入和流出基于FET的传感器的感测室和参考室;以及使期望包含离子材料的第二溶液流入和流出传感室,同时使第一溶液连续流入和流出参考室;测量每个感测和参考FET的源极和漏极之间的沟道区域中的电流;并校正感应FET的电流。

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