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Dual carbon nanotubes for critical dimension metrology on high aspect ratio semiconductor wafer patterns
Dual carbon nanotubes for critical dimension metrology on high aspect ratio semiconductor wafer patterns
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机译:双碳纳米管用于高长宽比半导体晶片图案上的关键尺寸计量
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摘要
A probe capable of measuring recesses in features such as apertures and/or trench-like structures of very small size is comprised of one or more carbon nanotubes (CNTs) which is oriented at an angle and, if two or more CNTs are employed, such that they cross (with or without touching each other) at a location separated from ends of the carbon nanotubes which approximates the depth of the aperture or trench-like structure and at an angle such that the ends of the carbon nanotubes extends by a lateral distance greater than a dimension of a recess of a feature to be measured or in excess of a sidewall angle or an angle of a crystal lattice of a material in which a feature to be measured is formed.
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