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Dual carbon nanotubes for critical dimension metrology on high aspect ratio semiconductor wafer patterns

机译:双碳纳米管用于高长宽比半导体晶片图案上的关键尺寸计量

摘要

A probe capable of measuring recesses in features such as apertures and/or trench-like structures of very small size is comprised of one or more carbon nanotubes (CNTs) which is oriented at an angle and, if two or more CNTs are employed, such that they cross (with or without touching each other) at a location separated from ends of the carbon nanotubes which approximates the depth of the aperture or trench-like structure and at an angle such that the ends of the carbon nanotubes extends by a lateral distance greater than a dimension of a recess of a feature to be measured or in excess of a sidewall angle or an angle of a crystal lattice of a material in which a feature to be measured is formed.
机译:能够测量诸如孔和/或非常小的尺寸的沟槽状结构之类的特征中的凹口的探针由一个或多个以一定角度取向的碳纳米管(CNT)组成,并且如果使用两个或多个CNT,则这种探针它们在与碳纳米管末端分开的位置交叉(彼此接触或不接触),该位置近似于孔或沟槽状结构的深度,并成一定角度,以使碳纳米管末端延伸一个横向距离大于要测量的特征的凹部的尺寸,或者大于形成有要测量的特征的材料的侧壁角或晶格角。

著录项

  • 公开/公告号US7997002B2

    专利类型

  • 公开/公告日2011-08-16

    原文格式PDF

  • 申请/专利权人 WEI LU;

    申请/专利号US20070933619

  • 发明设计人 WEI LU;

    申请日2007-11-01

  • 分类号G01B5/14;D01F9/12;

  • 国家 US

  • 入库时间 2022-08-21 18:12:07

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