VAPOR-PHASE GROWTH APPARATUS AND THIN-FILM VAPOR-PHASE GROWTH METHOD

摘要

A method for vapor-phase growth of a thin film by introducing into a reaction chamber a raw material gas wherein a dilute impurity gas, having a mixture of impurity gas of which the flow-rate is controlled by a first flow-rate controlling mechanism and diluting gas of which the flow-rate is controlled by a second flow-rate controlling mechanism, of which mixture the flow-rate is controlled by a third flow-rate controlling mechanism is mixed with a main gas of which the flow-rate is controlled by a fourth flow-rate controlling mechanism, and vapor-phase growth is carried out by supplying the raw material gas to the reaction chamber while changing continuously and simultaneously with arithmetic control the flow-rates of the gases flowing through said first, second and third flow-rate controlling mechanisms so that the resistivity distribution is controlled and a required resistivity profile is achieved in the thickness direction of the thin film.